Discrete Semiconductor Products

IRFU1N60APBF

Active

MOSFET N-CH 600V 1.4A TO251AA

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 600V 1.4A TO251AA

Technical Specifications

Parameters and characteristics for this part

Specification	IRFU1N60APBF

Current - Continuous Drain (Id) @ 25°C	1.4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	229 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	36 W
Rds On (Max) @ Id, Vgs [Max]	7 Ohm
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division IRFU120	7.7 A	N-Channel	360 pF	Through Hole	16 nC	10 V	270 mOhm	TO-251AA	2.5 W 42 W	100 V	MOSFET (Metal Oxide)	4 V	-55 °C	150 °C	20 V	IPAK TO-251-3 Short Leads TO-251AA
Vishay General Semiconductor - Diodes Division IRFU1N60APBF	1.4 A	N-Channel	229 pF	Through Hole		10 V		TO-251AA	36 W	600 V	MOSFET (Metal Oxide)	4 V	-55 °C	150 °C	30 V	IPAK TO-251-3 Short Leads TO-251AA	14 nC	7 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 1.4A (Tc) 36W (Tc) Through Hole TO-251AA

Technical documentation and resources