IRFU1 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 7.7A TO251AA
| Part | Current - Continuous Drain (Id) @ 25°C | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Technology | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 7.7 A | N-Channel | 360 pF | Through Hole | 16 nC | 10 V | 270 mOhm | TO-251AA | 2.5 W 42 W | 100 V | MOSFET (Metal Oxide) | 4 V | -55 °C | 150 °C | 20 V | IPAK TO-251-3 Short Leads TO-251AA | ||
Vishay General Semiconductor - Diodes Division | 1.4 A | N-Channel | 229 pF | Through Hole | 10 V | TO-251AA | 36 W | 600 V | MOSFET (Metal Oxide) | 4 V | -55 °C | 150 °C | 30 V | IPAK TO-251-3 Short Leads TO-251AA | 14 nC | 7 Ohm |