Discrete Semiconductor Products

SIS892ADN-T1-GE3

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TRANSISTOR POWER, FET, FET GENERAL PURPOSE POWER

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Discrete Semiconductor Products

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TRANSISTOR POWER, FET, FET GENERAL PURPOSE POWER

Technical Specifications

Parameters and characteristics for this part

Specification	SIS892ADN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.5 nC
Input Capacitance (Ciss) (Max) @ Vds	550 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	3.7 W, 52 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max)	Technology	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SIS892ADN-T1-GE3	28 A	PowerPAK® 1212-8	4.5 V 10 V	PowerPAK® 1212-8	Surface Mount	-55 °C	150 °C	20 V	3.7 W 52 W	MOSFET (Metal Oxide)	N-Channel	100 V	550 pF	3 V	33 mOhm	19.5 nC
Vishay General Semiconductor - Diodes Division SIS892DN-T1-GE3	30 A	PowerPAK® 1212-8	4.5 V 10 V	PowerPAK® 1212-8	Surface Mount	-55 °C	150 °C	20 V	3.7 W 52 W	MOSFET (Metal Oxide)	N-Channel	100 V	611 pF	3 V		21.5 nC	29 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 28A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources