SIS892 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
TRANSISTOR POWER, FET, FET GENERAL PURPOSE POWER
| Part | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Power Dissipation (Max) | Technology | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 28 A | PowerPAK® 1212-8 | 4.5 V 10 V | PowerPAK® 1212-8 | Surface Mount | -55 °C | 150 °C | 20 V | 3.7 W 52 W | MOSFET (Metal Oxide) | N-Channel | 100 V | 550 pF | 3 V | 33 mOhm | 19.5 nC | |
Vishay General Semiconductor - Diodes Division | 30 A | PowerPAK® 1212-8 | 4.5 V 10 V | PowerPAK® 1212-8 | Surface Mount | -55 °C | 150 °C | 20 V | 3.7 W 52 W | MOSFET (Metal Oxide) | N-Channel | 100 V | 611 pF | 3 V | 21.5 nC | 29 mOhm |