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Technical Specifications
Parameters and characteristics for this part
| Specification | BUK4D16-20X |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8.5 A, 26 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 8 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 15 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 931 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power Dissipation (Max) | 19 W, 2 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 14 mOhm |
| Supplier Device Package | DFN2020MD-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.88 | |
| Tape & Reel (TR) | 3000 | $ 0.15 | ||
| 6000 | $ 0.14 | |||
| 9000 | $ 0.13 | |||
| 30000 | $ 0.13 | |||
Description
General part information
BUK4D16-20 Series
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources