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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Qualification | Rds On (Max) @ Id, Vgs | Supplier Device Package | Package / Case | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Grade | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | Surface Mount | 8.5 A 26 A | 2 W 19 W | 175 °C | -55 °C | AEC-Q101 | 14 mOhm | DFN2020MD-6 | 6-UDFN Exposed Pad | N-Channel | 2.5 V 8 V | 20 V | 1.3 V | 931 pF | 15 nC | MOSFET (Metal Oxide) | Automotive | 12 V |