Discrete Semiconductor Products
NTTFS2D1N04HLTWG
ActiveON Semiconductor
N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 40 V, 150 A, 2.1 MΩ
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
NTTFS2D1N04HLTWG
ActiveON Semiconductor
N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 40 V, 150 A, 2.1 MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NTTFS2D1N04HLTWG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24 A, 150 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 43.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2745 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerWDFN |
| Power Dissipation (Max) | 2.2 W, 83 W |
| Rds On (Max) @ Id, Vgs | 2.1 mOhm |
| Supplier Device Package | 8-PQFN (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.56 | |
| 10 | $ 1.65 | |||
| 100 | $ 1.13 | |||
| 500 | $ 0.91 | |||
| 1000 | $ 0.84 | |||
| Digi-Reel® | 1 | $ 2.56 | ||
| 10 | $ 1.65 | |||
| 100 | $ 1.13 | |||
| 500 | $ 0.91 | |||
| 1000 | $ 0.84 | |||
| Tape & Reel (TR) | 3000 | $ 0.76 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.66 | |
| 10 | $ 1.12 | |||
| 25 | $ 1.08 | |||
| 50 | $ 1.04 | |||
| 100 | $ 0.99 | |||
| 250 | $ 0.98 | |||
| 500 | $ 0.96 | |||
| ON Semiconductor | N/A | 1 | $ 0.46 | |
Description
General part information
NTTFS2D1N04HL Series
This N-Channel MV MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.
Documents
Technical documentation and resources