NTTFS2D1N04HL Series

N-Channel Shielded Gate PowerTrench® MOSFET 40 V, 150 A, 2.1 mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 40 V, 150 A, 2.1 mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTTFS2D1N04HLTWG	-55 °C	150 °C	4.5 V 10 V	8-PQFN (3.3x3.3)	20 V	40 V	2.2 W 83 W	2745 pF	43.6 nC	8-PowerWDFN	2.1 mOhm	Surface Mount	MOSFET (Metal Oxide)	2 V	N-Channel	24 A 150 A

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 40 V, 150 A, 2.1 mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 2.1 mΩ at VGS= 10 V, ID=23 A

• Max rDS(on)= 3.3 mΩ at VGS= 4.5 V, ID= 18A

• Lowers Switching Noise/EMI

• MSL1 Robust Package Design

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MV MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.