Discrete Semiconductor Products
STE40NC60
ActiveSTMicroelectronics
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II MOSFET
Discrete Semiconductor Products
STE40NC60
ActiveSTMicroelectronics
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | STE40NC60 |
|---|---|
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 430 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 11100 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) [Max] | 460 W |
| Rds On (Max) @ Id, Vgs | 130 mOhm |
| Supplier Device Package | ISOTOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 40.87 | |
Description
General part information
STE40NC60 Series
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Documents
Technical documentation and resources