
ADRF6521ACPZ-R7
ActiveLOW FREQUENCY TO 3 GHZ, DUAL VGA WITH OUTPUT COMMON-MODE AND DC OFFSET CONTROL
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ADRF6521ACPZ-R7
ActiveLOW FREQUENCY TO 3 GHZ, DUAL VGA WITH OUTPUT COMMON-MODE AND DC OFFSET CONTROL
Technical Specifications
Parameters and characteristics for this part
| Specification | ADRF6521ACPZ-R7 |
|---|---|
| Current - Supply | 200 mA |
| Frequency | 3 GHz |
| Gain | 18 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 34.3 dB |
| Package / Case | 20-WFQFN Exposed Pad, CSP |
| RF Type | General Purpose |
| Supplier Device Package | 20-LFCSP (3x3) |
| Voltage - Supply [Max] | 5 V |
| Voltage - Supply [Min] | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 1500 | $ 22.94 | |
Description
General part information
ADRF6521 Series
The ADRF6521 is a dual, fully differential, low noise and low distortion variable gain amplifier (VGA). The high spurious-free dynamic range over the gain range makes the ADRF6521 ideal for communication systems with dense constellations, multiple carriers, and nearby interferers.The VGA has a 21 dB attenuation range with a typical voltage gain of 18 dB. The differential input impedance is 100 Ω, while the differential output impedance is 16 Ω. The ±1 dB gain flatness bandwidth is 2.5 GHz. The output buffers are capable of swinging 1.5 V p-p into 100 Ω loads at >55 dBc for second-order and third-order intermodulation distortion (IMD2 and IMD3), and for second and third harmonic distortion (HD2 and HD3) from low frequency to 1 GHz. Variable output dc offset control is accomplished with the OFS1 and OFS2 pins, and the output common-mode can be controlled with the VOCM pin.The ADRF6521 flexibly operates from a single +5 V supply or from a range of dual supplies and consumes a total supply current of 200 mA. When fully disabled, it consumes 25 mA typical. The ADRF6521 is fabricated in an advanced silicon-germanium BiCMOS process and is available in a 20-lead, exposed pad, 3 mm × 3 mm LFCSP. Performance is specified over the −40°C to +85°C temperature range.ApplicationsPoint-to-point and point-to-multipoint radiosBaseband IQ receiversDiversity receiversADC driversInstrumentationMedical