Discrete Semiconductor Products
TIP102
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 80 W, 8 A, 200 ROHS COMPLIANT: YES
Discrete Semiconductor Products
TIP102
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 80 W, 8 A, 200 ROHS COMPLIANT: YES
Technical Specifications
Parameters and characteristics for this part
| Specification | TIP102 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 8 A |
| Current - Collector Cutoff (Max) [Max] | 50 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 2 W |
| Supplier Device Package | TO-220 |
| Vce Saturation (Max) @ Ib, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
TIP102 Series
The TIP102 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic package. It is intented for use in power linear and switching applications.
The complementary PNP type is TIP107.
Documents
Technical documentation and resources