Discrete Semiconductor Products
IXFK27N80Q
ActiveLittelfuse/Commercial Vehicle Products
DISCMSFT NCH HIPERFET-Q CLASS TO-264(3)
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Discrete Semiconductor Products
IXFK27N80Q
ActiveLittelfuse/Commercial Vehicle Products
DISCMSFT NCH HIPERFET-Q CLASS TO-264(3)
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IXFK27N80Q |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 27 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7600 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-264AA, TO-264-3 |
| Power Dissipation (Max) | 500 W |
| Rds On (Max) @ Id, Vgs | 320 mOhm |
| Supplier Device Package | TO-264AA (IXFK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 17.35 | |
| 25 | $ 15.83 | |||
Description
General part information
IXFK27N80Q Series
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Advantages: Easy assembly High Power density Space savings
Documents
Technical documentation and resources