IXFK27N80Q Series

DiscMSFT NCh HiPerFET-Q Class TO-264(3)

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMSFT NCh HiPerFET-Q Class TO-264(3)

Part	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Littelfuse/Commercial Vehicle Products IXFK27N80Q	20 V	TO-264-3 TO-264AA	10 V	MOSFET (Metal Oxide)	TO-264AA (IXFK)	500 W	-55 °C	150 °C	7600 pF	Through Hole	27 A	N-Channel	4.5 V	800 V	320 mOhm	170 nC

Catalog

DiscMSFT NCh HiPerFET-Q Class TO-264(3)

Key Features

• International standard packages

• Rugged polysilicon gate cell structure

• Rated for Unclamped Inductive Load Switching (UIS)

• Fast intrinsic Rectifier

Description

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Advantages: Easy assembly High Power density Space savings