Part	Gate Charge	Package / Case	Vce(on) (Max) @ Vge, Ic	Operating Temperature	Test Condition	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	IGBT Type	Supplier Device Package	Reverse Recovery Time (trr)	Power - Max [Max]	Switching Energy	Current - Collector (Ic) (Max) [Max]	Mounting Type	Vce(on) (Max) @ Vge, Ic [Max]
Renesas Electronics Corporation RBN75H125S1FP4-A0#CB0
Renesas Electronics Corporation RBN40H125S1FPQ-A0#CB0	85 nC	TO-247-3	2.34 V	175 °C	10 Ohm 15 V 40 A 600 V	1250 V	124 ns	25 ns	Trench	TO-247A	156 ns	319 W	1.4 mJ 2 mJ	80 A	Through Hole
Renesas Electronics Corporation RBN25H125S1FPQ-A0#CB0	56 nC	TO-247-3		175 °C	10 Ohm 15 V 25 A 600 V	1250 V	109 ns	19 ns	Trench	TO-247A	102 ns	223 W	1.1 mJ 800 µJ	50 A	Through Hole	2.34 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	173	$ 32.27

Description

General part information

RBNxxH125S1 Series Series

The RBN75H125S1FP4-A0 1250V, 75A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.

Documents

Technical documentation and resources

RBN75H125S1FP4-A0#CB0 | Datasheet

Datasheet