RBNxxH125S1 Series Series

IGBT 1250V 75A TO-247plus Built-In FRD

Manufacturer: Renesas Electronics Corporation

Catalog

IGBT 1250V 75A TO-247plus Built-In FRD

Part	Td (on/off) @ 25°C	Package / Case	Mounting Type	Current - Collector (Ic) (Max)	Vce(on) (Max) @ Vge, Ic	Test Condition	Switching Energy	Gate Charge	Supplier Device Package	IGBT Type	Operating Temperature	Power - Max [Max]	Reverse Recovery Time (trr)
Renesas Electronics Corporation RBN25H125S1FPQ-A0#CB0	19 ns 109 ns	TO-247-3	Through Hole	50 A	2.34 V	10 Ohm 15 V 25 A 600 V	1.1 mJ 800 µJ	56 nC	TO-247A	Trench	175 °C	223 W	102 ns

Catalog

IGBT 1250V 75A TO-247plus Built-In FRD

Description

The RBN75H125S1FP4-A0 1250V, 75A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.