Specification	FGH80N60FD2TU

Current - Collector (Ic) (Max) [Max]	80 A
Gate Charge	120 nC
IGBT Type	Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	290 W
Reverse Recovery Time (trr)	61 ns
Supplier Device Package	TO-247-3
Switching Energy	520 µJ, 1 mJ
Td (on/off) @ 25°C	126 ns, 21 ns
Test Condition	10 Ohm, 40 A, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

FGH80N60FD2 Series

IGBT, 600V, Field Stop

Part	Operating Temperature [Min]	Operating Temperature [Max]	IGBT Type	Gate Charge	Supplier Device Package	Reverse Recovery Time (trr)	Package / Case	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Power - Max [Max]	Mounting Type	Vce(on) (Max) @ Vge, Ic	Test Condition	Current - Collector (Ic) (Max) [Max]
ON Semiconductor FGH80N60FD2TU	-55 °C	150 °C	Field Stop	120 nC	TO-247-3	61 ns	TO-247-3	1 mJ 520 µJ	600 V	21 ns 126 ns	290 W	Through Hole	2.4 V	10 Ohm 15 V 40 A 400 V	80 A
ON Semiconductor FGH80N60FDTU	-55 °C	150 °C	Field Stop	120 nC	TO-247-3	36 ns	TO-247-3	1 mJ 520 µJ	600 V	21 ns 126 ns	290 W	Through Hole	2.4 V	10 Ohm 15 V 40 A 400 V	80 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FGH80N60FD2 Series

Using novel field stop IGBT technology, ON Semiconductor's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.