FGH80N60FD2 Series

IGBT, 600V, Field Stop

Catalog

IGBT, 600V, Field Stop

Part	Operating Temperature [Min]	Operating Temperature [Max]	IGBT Type	Gate Charge	Supplier Device Package	Reverse Recovery Time (trr)	Package / Case	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Power - Max [Max]	Mounting Type	Vce(on) (Max) @ Vge, Ic	Test Condition	Current - Collector (Ic) (Max) [Max]
ON Semiconductor FGH80N60FD2TU	-55 °C	150 °C	Field Stop	120 nC	TO-247-3	61 ns	TO-247-3	1 mJ 520 µJ	600 V	21 ns 126 ns	290 W	Through Hole	2.4 V	10 Ohm 15 V 40 A 400 V	80 A
ON Semiconductor FGH80N60FDTU	-55 °C	150 °C	Field Stop	120 nC	TO-247-3	36 ns	TO-247-3	1 mJ 520 µJ	600 V	21 ns 126 ns	290 W	Through Hole	2.4 V	10 Ohm 15 V 40 A 400 V	80 A

Catalog

IGBT, 600V, Field Stop

Key Features

• High current capability

• Low saturation voltage: VCE(sat)=1.8V @ IC= 40A

• High input impedance

• Fast switching

• RoHS complaint

Description

Using novel field stop IGBT technology, ON Semiconductor's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.