Specification	SSM3K376R,LXHF

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	56 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	12 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1 V

SSM3K376R Series

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Qualification	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Grade	Operating Temperature	Vgs (Max) [Max]	Vgs (Max) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Technology
Toshiba Semiconductor and Storage SSM3K376R,LXHF	1.8 V	4.5 V	Surface Mount	30 V	1 V	SOT-23F	2.2 nC	56 mOhm	AEC-Q101	4 A	SOT-23-3 Flat Leads	N-Channel	Automotive	150 °C	12 V	-8 V	200 pF	1 W	MOSFET (Metal Oxide)
Toshiba Semiconductor and Storage SSM3K376R,LF	1.8 V	4.5 V	Surface Mount	30 V	1 V	SOT-23F	2.2 nC	56 mOhm		4 A	SOT-23-3 Flat Leads	N-Channel		150 °C	12 V	-8 V	200 pF	2 W	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 4A (Ta) 1W (Ta) Surface Mount SOT-23F

Technical documentation and resources