SSM3K376R Series

Catalog

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 30 V, 4.0 A, 0.056 Ω@4.5V, SOT-23F

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Qualification	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Grade	Operating Temperature	Vgs (Max) [Max]	Vgs (Max) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Technology
Toshiba Semiconductor and Storage SSM3K376R,LXHF	1.8 V	4.5 V	Surface Mount	30 V	1 V	SOT-23F	2.2 nC	56 mOhm	AEC-Q101	4 A	SOT-23-3 Flat Leads	N-Channel	Automotive	150 °C	12 V	-8 V	200 pF	1 W	MOSFET (Metal Oxide)
Toshiba Semiconductor and Storage SSM3K376R,LF	1.8 V	4.5 V	Surface Mount	30 V	1 V	SOT-23F	2.2 nC	56 mOhm		4 A	SOT-23-3 Flat Leads	N-Channel		150 °C	12 V	-8 V	200 pF	2 W	MOSFET (Metal Oxide)