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NTBG1000N170M1
Discrete Semiconductor Products

NVBG030N120M3S

Active
ON Semiconductor

SILICON CARBIDE (SIC) MOSFET - ELITESIC, 30 MOHM, 1200 V, M3S, D2PAK-7L

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NTBG1000N170M1
Discrete Semiconductor Products

NVBG030N120M3S

Active
ON Semiconductor

SILICON CARBIDE (SIC) MOSFET - ELITESIC, 30 MOHM, 1200 V, M3S, D2PAK-7L

Technical Specifications

Parameters and characteristics for this part

SpecificationNVBG030N120M3S
Current - Continuous Drain (Id) @ 25°C77 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs107 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2430 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)348 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs39 mOhm
Supplier Device PackageD2PAK-7
TechnologySiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]22 V
Vgs (Max) [Min]-10 V
Vgs(th) (Max) @ Id4.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 23.64
10$ 21.01
100$ 18.37
Digi-Reel® 1$ 23.64
10$ 21.01
100$ 18.37
Tape & Reel (TR) 800$ 15.68
NewarkEach (Supplied on Full Reel) 400$ 14.44
ON SemiconductorN/A 1$ 16.17

Description

General part information

NVBG030N120M3S Series

The new family of 1200V M3S planar EliteSiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.