NVBG030N120M3S Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 30 mohm, 1200 V, M3S, D2PAK-7L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 30 mohm, 1200 V, M3S, D2PAK-7L

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Grade	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max) [Min]	Vgs (Max) [Max]
ON Semiconductor NVBG030N120M3S	Surface Mount	18 V	39 mOhm	4.4 V	2430 pF	AEC-Q101	348 W	-55 °C	175 ░C	SiC (Silicon Carbide Junction Transistor)	107 nC	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	N-Channel	77 A	Automotive	1200 V	D2PAK-7	-10 V	22 V

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 30 mohm, 1200 V, M3S, D2PAK-7L

Key Features

• D2PAK-7L package for low common source inductance

• 15V to 18V Gate Drive

• New M3S technology: 30mohm RDS(ON) with low EON and EOFF losses

• 100% Avalanche Tested

• Devices are Pb−Free and are RoHS Compliant

• Qualified for Automotive According to AEC−Q101

Description

The new family of 1200V M3S planar EliteSiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.