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8-SOIC
Discrete Semiconductor Products

SI4636DY-T1-GE3

Obsolete

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8-SOIC
Discrete Semiconductor Products

SI4636DY-T1-GE3

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI4636DY-T1-GE3
Current - Continuous Drain (Id) @ 25°C17 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]60 nC
Input Capacitance (Ciss) (Max) @ Vds2635 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)4.4 W, 2.5 W
Rds On (Max) @ Id, Vgs8.5 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SI4636 Series

N-Channel 30 V 17A (Tc) 2.5W (Ta), 4.4W (Tc) Surface Mount 8-SOIC

Documents

Technical documentation and resources