SI4636 Series

Catalog

MOSFET N-CH 30V 17A 8SO

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI4636DY-T1-E3	30 V	2.5 V	4.5 V 10 V	-55 °C	150 °C	8-SOIC	16 V	8-SOIC	3.9 mm	0.154 in	8.5 mOhm	Surface Mount	60 nC	N-Channel	MOSFET (Metal Oxide)	2635 pF	2.5 W 4.4 W	17 A
Vishay General Semiconductor - Diodes Division SI4636DY-T1-GE3	30 V	2.5 V	4.5 V 10 V	-55 °C	150 °C	8-SOIC	16 V	8-SOIC	3.9 mm	0.154 in	8.5 mOhm	Surface Mount	60 nC	N-Channel	MOSFET (Metal Oxide)	2635 pF	2.5 W 4.4 W	17 A