Discrete Semiconductor Products

STW40N95K5

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STMicroelectronics

N-CHANNEL 950 V, 0.110 OHM TYP., 38 A MDMESH K5 POWER MOSFET IN A TO-247 PACKAGE

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DocumentsTN1378 AN4250 +15

Discrete Semiconductor Products

STW40N95K5

Active

STMicroelectronics

N-CHANNEL 950 V, 0.110 OHM TYP., 38 A MDMESH K5 POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

DocumentsTN1378 AN4250 +15

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW40N95K5

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	450 W
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STW40N95K5 Series

N-channel 950 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOSFET in a TO-247 package

Part	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Package / Case
STMicroelectronics STW40N95K5	Through Hole	450 W	30 V	3300 pF	TO-247-3	10 V	5 V	MOSFET (Metal Oxide)	130 mOhm	950 V	N-Channel	38 A	150 °C	-55 °C	93 nC	TO-247-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	528	$ 16.60
Newark	Each	1	$ 17.19
		10	$ 17.18
		25	$ 10.69
		50	$ 10.68
		100	$ 9.48

Description

General part information

STW40N95K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.