Discrete Semiconductor Products

APT50MC120JCU2

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MOSFET N-CH 1200V 71A SOT227

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Discrete Semiconductor Products

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MOSFET N-CH 1200V 71A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	APT50MC120JCU2

Current - Continuous Drain (Id) @ 25°C	71 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	179 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2980 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs [Max]	34 mOhm
Supplier Device Package	SOT-227
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	2.3 V, 1 mA

Part	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]	Supplier Device Package	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]
Microchip Technology APT50MC120JCU2	1200 V	MOSFET (Metal Oxide)	71 A	34 mOhm	2980 pF	N-Channel	Chassis Mount	1 mA 2.3 V	300 W	179 nC	-10 V	25 V	SOT-227	SOT-227-4 miniBLOC	150 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1200 V 71A (Tc) 300W (Tc) Chassis Mount SOT-227

Technical documentation and resources

No documents available