Littelfuse Power Semi ISOPLUSi4PAC 3 2Sq 3L image

Discrete Semiconductor Products

IXBF32N300

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LITTELFUSE

DISC IGBT BIMSFT-VERYHIVOLT I4-PAK ISO+/ TUBE

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DocumentsUR_QQQX2_E72873_20171208 Datasheet +3

Discrete Semiconductor Products

IXBF32N300

Active

LITTELFUSE

DISC IGBT BIMSFT-VERYHIVOLT I4-PAK ISO+/ TUBE

Deep-Dive with AI

DocumentsUR_QQQX2_E72873_20171208 Datasheet +3

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXBF32N300

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	250 A
Gate Charge	142 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	i4-Pac™-5 (3 Leads)
Power - Max [Max]	160 W
Reverse Recovery Time (trr)	1500 ns
Supplier Device Package	ISOPLUS i4-PAC™
Vce(on) (Max) @ Vge, Ic	3.2 V

Very High Voltage Series

Disc IGBT BiMSFT-VeryHiVolt I4-PAK ISO+

Part	Supplier Device Package	Gate Charge	Current - Collector Pulsed (Icm)	Package / Case	Reverse Recovery Time (trr)	Mounting Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Vce(on) (Max) @ Vge, Ic [Max]	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition
LITTELFUSE IXBF32N300	ISOPLUS i4-PAC™	142 nC	250 A	i4-Pac™-5 (3 Leads)	1500 ns	Through Hole	40 A	150 °C	-55 °C	160 W	3.2 V
LITTELFUSE IXBF20N300	ISOPLUS i4-PAC™	105 nC	150 A	i4-Pac™-5 (3 Leads)	1.35 µs	Through Hole	34 A	150 °C	-55 °C	150 W		3.2 V
LITTELFUSE IXBX50N360HV	TO-247PLUS-HV	210 nC	420 A	TO-247-3 Variant	1.7 µs	Through Hole	125 A	150 °C	-55 °C	660 W	2.9 V		46 ns 205 ns	3600 V	5 Ohm 15 V 50 A 960 V
LITTELFUSE IXBL64N250	ISOPLUSi5-Pak™	400 nC		ISOPLUSi5-Pak™	160 ns	Through Hole		150 °C	-55 °C	500 W		3 V		2500 V
LITTELFUSE IXBK64N250	TO-264AA			TO-264-3 TO-264AA		Through Hole	75 A			735 W		3 V		2500 V
LITTELFUSE IXBH12N300	TO-247AD	62 nC	100 A	TO-247-3	1.4 µs	Through Hole	30 A	150 °C	-55 °C	160 W	3.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 76.05
Newark	Each	100	$ 79.71

Description

General part information

Very High Voltage Series

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount

Documents

Technical documentation and resources

UR_QQQX2_E72873_20171208

Document

Datasheet

Forward-Biased, Reverse-Biased, and Short-Circuit Safe Operating Area of MOSFETs and IGBTs

Technical Document

UR_QQQX2_E153432_20180829

Document

Product Change Notice EN

Datasheet