Very High Voltage Series

Disc IGBT BiMSFT-VeryHiVolt I4-PAK ISO+

Catalog

Disc IGBT BiMSFT-VeryHiVolt I4-PAK ISO+

Part	Supplier Device Package	Gate Charge	Current - Collector Pulsed (Icm)	Package / Case	Reverse Recovery Time (trr)	Mounting Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Vce(on) (Max) @ Vge, Ic [Max]	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition
LITTELFUSE IXBF32N300	ISOPLUS i4-PAC™	142 nC	250 A	i4-Pac™-5 (3 Leads)	1500 ns	Through Hole	40 A	150 °C	-55 °C	160 W	3.2 V
LITTELFUSE IXBF20N300	ISOPLUS i4-PAC™	105 nC	150 A	i4-Pac™-5 (3 Leads)	1.35 µs	Through Hole	34 A	150 °C	-55 °C	150 W		3.2 V
LITTELFUSE IXBX50N360HV	TO-247PLUS-HV	210 nC	420 A	TO-247-3 Variant	1.7 µs	Through Hole	125 A	150 °C	-55 °C	660 W	2.9 V		46 ns 205 ns	3600 V	5 Ohm 15 V 50 A 960 V
LITTELFUSE IXBL64N250	ISOPLUSi5-Pak™	400 nC		ISOPLUSi5-Pak™	160 ns	Through Hole		150 °C	-55 °C	500 W		3 V		2500 V
LITTELFUSE IXBK64N250	TO-264AA			TO-264-3 TO-264AA		Through Hole	75 A			735 W		3 V		2500 V
LITTELFUSE IXBH12N300	TO-247AD	62 nC	100 A	TO-247-3	1.4 µs	Through Hole	30 A	150 °C	-55 °C	160 W	3.2 V

Catalog

Disc IGBT BiMSFT-VeryHiVolt I4-PAK ISO+

Description

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount