Discrete Semiconductor Products

JANS1N5819-1

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Microchip Technology

DIODE SCHOTTKY 45V 1A DO41

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Discrete Semiconductor Products

JANS1N5819-1

Active

Microchip Technology

DIODE SCHOTTKY 45V 1A DO41

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	JANS1N5819-1

Capacitance @ Vr, F	70 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	50 µA
Grade	Military
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Qualification	MIL-PRF-19500/586
Speed	200 mA, 500 ns
Supplier Device Package	DO-41
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	45 V
Voltage - Forward (Vf) (Max) @ If [Max]	490 mV

JANTXV1N5819UR-1-Rectifier Series

Rectifier Diode Schottky 2-Pin 45V, 1A DO-213AB Bag T/R

Part	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Package / Case	Supplier Device Package	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Capacitance @ Vr, F	Qualification	Grade	Voltage - Forward (Vf) (Max) @ If [Max]
Microchip Technology 1N5819-1	340 mV	50 µA	45 V	Through Hole	1 A	Axial DO-204AL DO-41	DO-204AL (DO-41)	200 mA 500 ns	125 °C	-65 C	Schottky	70 pF
Microchip Technology 1N5819G	600 mV	1 mA	40 V	Through Hole	1 A	Axial DO-204AL DO-41	DO-204AL (DO-41)	200 mA 500 ns	150 °C	-65 C	Schottky
Microchip Technology JANTX1N5819UR-1		50 µA	45 V	Surface Mount	1 A	DO-213AB MELF (Glass)	DO-213AB (MELF LL41)	200 mA 500 ns	125 °C	-65 C	Schottky	70 pF	MIL-PRF-19500/586	Military	490 mV
Microchip Technology JANS1N5819-1		50 µA	45 V	Through Hole	1 A	Axial DO-204AL DO-41	DO-41	200 mA 500 ns	125 °C	-65 C	Schottky	70 pF	MIL-PRF-19500/586	Military	490 mV
Microchip Technology 1N5819UR-1/TR		50 µA	45 V	Surface Mount	1 A	DO-213AB MELF (Glass)	DO-213AB (MELF LL41)	200 mA 500 ns	125 °C	-65 C	Schottky	70 pF			490 mV
Microchip Technology 1N5819		50 µA	45 V	Through Hole	1 A	Axial DO-204AL DO-41	DO-204AL (DO-41)	200 mA 500 ns	125 °C	-65 C	Schottky	70 pF			490 mV
Microchip Technology 1N5819UR-1E3/TR		50 µA	45 V	Surface Mount	1 A	DO-213AB MELF (Glass)	DO-213AB (MELF LL41)	200 mA 500 ns	125 °C	-65 C	Schottky	70 pF			490 mV
Microchip Technology JAN1N5819UR-1/TR		50 µA	45 V	Surface Mount	1 A	DO-213AB MELF (Glass)	DO-213AB (MELF LL41)	200 mA 500 ns	125 °C	-65 C	Schottky	70 pF	MIL-PRF-19500/586	Military	490 mV
Microchip Technology JANTX1N5819-1	600 mV	100 µA	45 V	Through Hole	1 A	Axial DO-204AL DO-41	DO-204AL (DO-41)	200 mA 500 ns	125 °C	-65 C	Schottky	70 pF	MIL-PRF-19500/586	Military
Microchip Technology 1N5819UR-1		50 µA	45 V	Surface Mount	1 A	DO-213AB MELF (Glass)	DO-213AB (MELF LL41)	200 mA 500 ns	150 °C	-65 C	Schottky	70 pF			490 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	50	$ 87.95

Description

General part information

JANTXV1N5819UR-1-Rectifier Series

This 1 Amp schottky barrier rectifier is metallurgically bonded and offers military grade qualifications for the part numbers of 1N5819UR-1 and 1N6761UR-1 for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-213AB MELF glass package.

Documents

Technical documentation and resources

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