Discrete Semiconductor Products
STB34NM60N
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.092 OHM TYP., 31.5 A MDMESH II POWER MOSFET IN D2PAK PACKAGE
Discrete Semiconductor Products
STB34NM60N
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.092 OHM TYP., 31.5 A MDMESH II POWER MOSFET IN D2PAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STB34NM60N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 29 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 84 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2722 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 250 W |
| Rds On (Max) @ Id, Vgs | 105 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 495 | $ 10.02 | |
Description
General part information
STB34NM60N Series
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources