Discrete Semiconductor Products
FDB2532
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 150 V, 79 A, 0.014 OHM, TO-263AB, SURFACE MOUNT
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Discrete Semiconductor Products
FDB2532
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 150 V, 79 A, 0.014 OHM, TO-263AB, SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDB2532 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 79 A, 8 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 107 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5870 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 310 W |
| Rds On (Max) @ Id, Vgs | 16 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 5.17 | |
| 10 | $ 3.44 | |||
| 100 | $ 2.46 | |||
| Digi-Reel® | 1 | $ 5.17 | ||
| 10 | $ 3.44 | |||
| 100 | $ 2.46 | |||
| Tape & Reel (TR) | 800 | $ 1.98 | ||
| Newark | Each (Supplied on Full Reel) | 800 | $ 2.22 | |
| ON Semiconductor | N/A | 1 | $ 2.11 | |
Description
General part information
FDB2532_F085 Series
N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ, The latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification
Documents
Technical documentation and resources
