FDB2532_F085 Series

N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ

Catalog

N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ

Part	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Mounting Type	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Qualification
ON Semiconductor FDB2532-F085	20 V	N-Channel	79 A	5870 pF	-55 °C	175 ░C	150 V	310 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	16 mOhm	MOSFET (Metal Oxide)	TO-263 (D2PAK)	Surface Mount	Automotive	107 nC	6 V 10 V	4 V	AEC-Q101
ON Semiconductor FDB2532	20 V	N-Channel	8 A 79 A	5870 pF	-55 °C	175 ░C	150 V	310 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	16 mOhm	MOSFET (Metal Oxide)	TO-263 (D2PAK)	Surface Mount		107 nC	6 V 10 V	4 V

Catalog

N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ

Key Features

• rDS(ON)= 14mΩ (Typ.), VGS= 10V, ID= 33A

• Qg(tot) = 82nC (Typ.), VGS= 10V

• Low Miller Charge

• Low QRR Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

• RoHS Compliant

Description

N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ, The latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification