Discrete Semiconductor Products

STU13NM60N

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MOSFET N-CH 600V 11A IPAK

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Discrete Semiconductor Products

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MOSFET N-CH 600V 11A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU13NM60N

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds	790 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	IPAK
Supplier Device Package	TO-251
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature	Supplier Device Package	Supplier Device Package	Package / Case	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STU13NM60N	600 V	150 °C	IPAK	TO-251	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	25 V	360 mOhm	4 V	Through Hole	790 pF	N-Channel	90 W	27 nC	10 V	11 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 11A (Tc) 90W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources