Discrete Semiconductor Products

RD3G600GNTL

NRND

MOSFETS RD3G600GN IS A POWER MOSFET WITH LOW-ON RESISTANCE AND HIGH POWER PACKAGE (TO-252), SUITABLE FOR SWITCHING.

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Discrete Semiconductor Products

NRND

MOSFETS RD3G600GN IS A POWER MOSFET WITH LOW-ON RESISTANCE AND HIGH POWER PACKAGE (TO-252), SUITABLE FOR SWITCHING.

Technical Specifications

Parameters and characteristics for this part

Specification	RD3G600GNTL

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	46.5 nC
Input Capacitance (Ciss) (Max) @ Vds	3400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	40 W
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Rohm Semiconductor RD3G600GNTL	20 V	MOSFET (Metal Oxide)	4.5 V 10 V	40 W	TO-252	3400 pF	2.5 V	150 °C	46.5 nC	N-Channel	40 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 A	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETS RD3G600GN IS A POWER MOSFET WITH LOW-ON RESISTANCE AND HIGH POWER PACKAGE (TO-252), SUITABLE FOR SWITCHING.

Technical documentation and resources