RD3G Series
Manufacturer: Rohm Semiconductor
MOSFETS RD3G600GN IS A POWER MOSFET WITH LOW-ON RESISTANCE AND HIGH POWER PACKAGE (TO-252), SUITABLE FOR SWITCHING.
| Part | Vgs (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Drain to Source Voltage (Vdss) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 20 V | MOSFET (Metal Oxide) | 4.5 V 10 V | 40 W | TO-252 | 3400 pF | 2.5 V | 150 °C | 46.5 nC | N-Channel | 40 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 60 A | Surface Mount |