Discrete Semiconductor Products

CSD17309Q3

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30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 6.3 MOHM

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Search across all available documentation for this part.

DocumentsMOSFET Support and Training Tools (Rev. F)Avoid Common Mistakes When Selecting And Designing With Power MOSFETs +9

Discrete Semiconductor Products

CSD17309Q3

Active

Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 6.3 MOHM

Deep-Dive with AI

DocumentsMOSFET Support and Training Tools (Rev. F)Avoid Common Mistakes When Selecting And Designing With Power MOSFETs +9

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CSD17309Q3

Current - Continuous Drain (Id) @ 25°C	20 A, 60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	3 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	1440 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.8 W
Rds On (Max) @ Id, Vgs	5.4 mOhm
Supplier Device Package	8-VSON-CLIP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1.7 V

CSD17309Q3 Series

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.3 mOhm

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Vgs(th) (Max) @ Id
Texas Instruments CSD17309Q3	-55 °C	150 °C	MOSFET (Metal Oxide)	8-PowerTDFN	2.8 W	10 nC	Surface Mount	20 A 60 A	8-VSON-CLIP (3.3x3.3)	30 V	1440 pF	8 V	3 V	N-Channel	5.4 mOhm	10 V	-8 V	1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.09
		10	$ 0.90
		100	$ 0.70
		500	$ 0.59
		1000	$ 0.48
	Digi-Reel®	1	$ 1.09
		10	$ 0.90
		100	$ 0.70
		500	$ 0.59
		1000	$ 0.48
	Tape & Reel (TR)	2500	$ 0.45
		5000	$ 0.43
		12500	$ 0.41
Texas Instruments	LARGE T&R	1	$ 0.81
		100	$ 0.62
		250	$ 0.46
		1000	$ 0.33

Description

General part information

CSD17309Q3 Series

This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.

Documents

Technical documentation and resources

CSD17309Q3

Deep-Dive with AI

CSD17309Q3

Deep-Dive with AI

Technical Specifications

CSD17309Q3 Series

Pricing

Description

CSD17309Q3 Series

Documents

MOSFET Support and Training Tools (Rev. F)

Avoid Common Mistakes When Selecting And Designing With Power MOSFETs

Power Management Guide 2018 (Rev. R)

Using MOSFET Transient Thermal Impedance Curves In Your Design

CSD17309Q3 30-V N-Channel NexFET Power MOSFET datasheet (Rev. B)

Using MOSFET Safe Operating Area Curves in Your Design

Ringing Reduction Techniques for NexFET High Performance MOSFETs

Semiconductor and IC Package Thermal Metrics (Rev. D)

When and how to supply an external bias for buck controllers – part 1

QFN and SON PCB Attachment (Rev. C)

Tips for Successfully Paralleling Power MOSFETs

CSD17309Q3 Series