Discrete Semiconductor Products

STP7N80K5

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STMicroelectronics

N-CHANNEL 800 V, 0.95 OHM TYP., 6 A MDMESH K5 POWER MOSFET IN TO-220 PACKAGE

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DocumentsAN4250 UM1575 +17

Discrete Semiconductor Products

STP7N80K5

Active

STMicroelectronics

N-CHANNEL 800 V, 0.95 OHM TYP., 6 A MDMESH K5 POWER MOSFET IN TO-220 PACKAGE

Deep-Dive with AI

DocumentsAN4250 UM1575 +17

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP7N80K5

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	360 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STP7N80K5 Series

N-channel 800 V, 0.95 Ohm typ., 6 A MDmesh K5 Power MOSFET in TO-220 package

Part	Technology	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
STMicroelectronics STP7N80K5	MOSFET (Metal Oxide)	TO-220-3	N-Channel	13.4 nC	150 °C	-55 °C	Through Hole	10 V	110 W	6 A	30 V	TO-220	1.2 Ohm	360 pF	5 V	800 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	716	$ 2.87
Newark	Each	1	$ 3.35
		10	$ 1.86
		100	$ 1.73
		500	$ 1.49
		1000	$ 1.38
		3000	$ 1.35

Description

General part information

STP7N80K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.