Discrete Semiconductor Products

IPB050N06NGATMA1

Obsolete

MOSFET N-CH 60V 100A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 100A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPB050N06NGATMA1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	167 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	300 W
Rds On (Max) @ Id, Vgs	4.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
INFINEON IPB050N10NF2SATMA1	100 V	175 °C	-55 °C	N-Channel	76 nC	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	103 A	6 V 10 V	20 V	3.8 V	3600 pF	150 W	Surface Mount	5.05 mOhm
INFINEON IPB050N06NGATMA1	60 V	175 °C	-55 °C	N-Channel		MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 A	10 V	20 V	4 V	6100 pF	300 W	Surface Mount	4.7 mOhm	167 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 60 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources