IPB050N Series
Manufacturer: INFINEON
INFINEON'S STRONGIRFET™ 2 POWER MOSFET 100 V FEATURES LOW RDS(ON) OF 5 MOHM, ADDRESSING A BROAD RANGE OF APPLICATIONS FROM LOW- TO HIGH-SWITCHING FREQUENCY.
| Part | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 100 V | 175 °C | -55 °C | N-Channel | 76 nC | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 103 A | 6 V 10 V | 20 V | 3.8 V | 3600 pF | 150 W | Surface Mount | 5.05 mOhm | |
INFINEON | 60 V | 175 °C | -55 °C | N-Channel | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 100 A | 10 V | 20 V | 4 V | 6100 pF | 300 W | Surface Mount | 4.7 mOhm | 167 nC |