Discrete Semiconductor Products

CSD18514Q5AT

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40-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 4.9 MOHM

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Discrete Semiconductor Products

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40-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 4.9 MOHM

Technical Specifications

Parameters and characteristics for this part

Specification	CSD18514Q5AT

Current - Continuous Drain (Id) @ 25°C	89 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	2683 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	74 W
Rds On (Max) @ Id, Vgs	7.9 mOhm
Supplier Device Package	8-VSONP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm

Part	Package / Case	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Texas Instruments CSD18514Q5AT	8-PowerTDFN	Surface Mount	20 V	4.5 V 10 V	89 A	-55 °C	150 °C	74 W	N-Channel	2683 pF	40 nC	7.9 mOhm	2.4 V	8-VSONP (5x6)	MOSFET (Metal Oxide)	40 V
Texas Instruments CSD18514Q5A	8-PowerTDFN	Surface Mount	20 V	4.5 V 10 V	89 A	-55 °C	150 °C	74 W	N-Channel		38 nC	7.9 mOhm	2.4 V	8-VSONP (5x6)	MOSFET (Metal Oxide)	40 V	2680 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 4.1-mΩ, SON 5-mm × 6-mm, 40-V NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources