CSD18514Q5A Series

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm

Catalog

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm

Part	Package / Case	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Texas Instruments CSD18514Q5AT	8-PowerTDFN	Surface Mount	20 V	4.5 V 10 V	89 A	-55 °C	150 °C	74 W	N-Channel	2683 pF	40 nC	7.9 mOhm	2.4 V	8-VSONP (5x6)	MOSFET (Metal Oxide)	40 V
Texas Instruments CSD18514Q5A	8-PowerTDFN	Surface Mount	20 V	4.5 V 10 V	89 A	-55 °C	150 °C	74 W	N-Channel		38 nC	7.9 mOhm	2.4 V	8-VSONP (5x6)	MOSFET (Metal Oxide)	40 V	2680 pF

Catalog

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm

Key Features

• Low RDS(ON)Low-Thermal ResistanceAvalanche RatedLogic LevelLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageLow RDS(ON)Low-Thermal ResistanceAvalanche RatedLogic LevelLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

This 4.1-mΩ, SON 5-mm × 6-mm, 40-V NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 4.1-mΩ, SON 5-mm × 6-mm, 40-V NexFET™ power MOSFET is designed to minimize losses in power conversion applications.