Discrete Semiconductor Products

MJE171

Obsolete

ON Semiconductor

3.0 A PNP BIPOLAR POWER TRANSISTOR

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-77-09-TO-225

Discrete Semiconductor Products

MJE171

Obsolete

ON Semiconductor

3.0 A PNP BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

DocumentsDatasheet Package Drawing-77-09-TO-225

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MJE171

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	12.5 W
Supplier Device Package	TO-126
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.7 V
Voltage - Collector Emitter Breakdown (Max)	60 V

MJE171 Series

3.0 A PNP Bipolar Power Transistor

Part	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Frequency - Transition
ON Semiconductor MJE171	150 °C	-65 °C	Through Hole	60 V	TO-126	12.5 W	1.7 V	TO-126-3 TO-225AA	50 hFE	3 A	PNP	100 nA	50 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJE171 Series

The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. The MJE170, MJE171, MJE172 (PNP); MJE180, MJE181, MJE182 (NPN) are complementary devices.