MJE171 Series

3.0 A PNP Bipolar Power Transistor

Catalog

3.0 A PNP Bipolar Power Transistor

Part	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Frequency - Transition
ON Semiconductor MJE171	150 °C	-65 °C	Through Hole	60 V	TO-126	12.5 W	1.7 V	TO-126-3 TO-225AA	50 hFE	3 A	PNP	100 nA	50 MHz

Catalog

3.0 A PNP Bipolar Power Transistor

Key Features

• Collector-Emitter Sustaining Voltage -VCEO(sus)= 60 Vdc - MJE171, MJE181VCEO(sus)= 80 Vdc - MJE172, MJE182

• DC Current Gain -hFE= 30 (Min) @ IC= 0.5 AdchFE= 12 (Min) @ IC= 1.5 Adc

• Current-Gain - Bandwidth Product -fT= 50 MHz (Min) @ IC= 100 mAdc

• Annular Construction for Low Leakages -ICBO= 100 nA (Max) @ Rated VCB

• Pb-Free Packages are Available

Description

The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. The MJE170, MJE171, MJE172 (PNP); MJE180, MJE181, MJE182 (NPN) are complementary devices.