Discrete Semiconductor Products

SI3430DV-T1-BE3

LTB

MOSFET N-CH 100V 1.8A 6TSOP

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET N-CH 100V 1.8A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3430DV-T1-BE3

Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.2 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	1.14 W
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI3430DV-T1-BE3	20 V	Surface Mount	8.2 nC	6-TSOP	-55 °C	150 °C	1.8 A	100 V	1.14 W	N-Channel	6 V 10 V	MOSFET (Metal Oxide)	170 mOhm	SOT-23-6 Thin TSOT-23-6
Vishay General Semiconductor - Diodes Division SI3430DV-T1-GE3	20 V	Surface Mount	6.6 nC	6-TSOP	-55 °C	150 °C	1.8 A	100 V	1.14 W	N-Channel	6 V 10 V	MOSFET (Metal Oxide)	170 mOhm	SOT-23-6 Thin TSOT-23-6	2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP

Technical documentation and resources