SI3430 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 100V 1.8A 6TSOP
| Part | Vgs (Max) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Technology | Rds On (Max) @ Id, Vgs | Package / Case | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 20 V | Surface Mount | 8.2 nC | 6-TSOP | -55 °C | 150 °C | 1.8 A | 100 V | 1.14 W | N-Channel | 6 V 10 V | MOSFET (Metal Oxide) | 170 mOhm | SOT-23-6 Thin TSOT-23-6 | |
Vishay General Semiconductor - Diodes Division | 20 V | Surface Mount | 6.6 nC | 6-TSOP | -55 °C | 150 °C | 1.8 A | 100 V | 1.14 W | N-Channel | 6 V 10 V | MOSFET (Metal Oxide) | 170 mOhm | SOT-23-6 Thin TSOT-23-6 | 2 V |