Specification	PMV32UP,215

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1890 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	510 mW
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	950 mV

PMV32 Series

20 V, 4 A P-channel Trench MOSFET

Part	FET Type	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Technology
Nexperia USA Inc. PMV32UP,215	P-Channel	950 mV	8 V	15.5 nC	20 V	Surface Mount	TO-236AB	36 mOhm	1.8 V	4.5 V	4 A	1890 pF	510 mW	150 °C	-55 °C	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.44
		10	$ 0.36
		100	$ 0.24
		500	$ 0.18
		1000	$ 0.16
	Digi-Reel®	1	$ 0.44
		10	$ 0.36
		100	$ 0.24
		500	$ 0.18
		1000	$ 0.16
	N/A	2700	$ 0.82
	Tape & Reel (TR)	3000	$ 0.15
		6000	$ 0.14
		9000	$ 0.14
		15000	$ 0.13
		21000	$ 0.13

Description

General part information

PMV32 Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.