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20 V, 4 A P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, 4 A P-channel Trench MOSFET
20 V, 4 A P-channel Trench MOSFET
| Part | FET Type | Vgs(th) (Max) @ Id | Vgs (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | P-Channel | 950 mV | 8 V | 15.5 nC | 20 V | Surface Mount | TO-236AB | 36 mOhm | 1.8 V | 4.5 V | 4 A | 1890 pF | 510 mW | 150 °C | -55 °C | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) |