Specification	FDC30N20DZ

Current - Continuous Drain (Id) @ 25°C	4.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.9 nC
Input Capacitance (Ciss) (Max) @ Vds	535 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max) [Max]	960 mW
Rds On (Max) @ Id, Vgs	31 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDC30N20DZ Series

Dual N-Channel PowerTrench® MOSFET, 30V, 4.6A, 31mΩ

Part	Technology	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
ON Semiconductor FDC30N20DZ	MOSFET (Metal Oxide)	30 V	N-Channel	Surface Mount	SuperSOT™-6	31 mOhm	4.5 V 10 V	SOT-23-6 Thin TSOT-23-6	20 V	4.6 A	535 pF	-55 °C	150 °C	3 V	7.9 nC	960 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDC30N20DZ Series

This N-Channel MOSFET is produced using an advanced PowerTrench® process. This process has been optimized for rDS(on), switching performance and ruggedness.