FDC30N20DZ Series

Dual N-Channel PowerTrench® MOSFET, 30V, 4.6A, 31mΩ

Catalog

Dual N-Channel PowerTrench® MOSFET, 30V, 4.6A, 31mΩ

Part	Technology	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
ON Semiconductor FDC30N20DZ	MOSFET (Metal Oxide)	30 V	N-Channel	Surface Mount	SuperSOT™-6	31 mOhm	4.5 V 10 V	SOT-23-6 Thin TSOT-23-6	20 V	4.6 A	535 pF	-55 °C	150 °C	3 V	7.9 nC	960 mW

Catalog

Dual N-Channel PowerTrench® MOSFET, 30V, 4.6A, 31mΩ

Key Features

• Max rDS(on)= 31 mΩ at VGS= 10 V, ID= 4.6 A

• Max rDS(on)= 38 mΩ at VGS= 4.5 V, ID= 4.2 A

• High Performance Trench® Technology for Extremely Low rDS(on)

• Fast Switching Speed

• 100% UIL Tested

• Typical CDM ESD protection level > 2.0 kV ( Note 5)

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench® process. This process has been optimized for rDS(on), switching performance and ruggedness.