IMW120R045M1XKSA1
NRNDTHE COOLSIC™ 1200 V, 45 MΩ SIC MOSFET IN TO247-3 PACKAGE BUILD ON A STATE-OF-THE-ART TRENCH SEMICONDUCTOR PROCESS OPTIMIZED TO COMBINE PERFORMANCE WITH RELIABILITY. IN COMPARISON TO TRADITIONAL SILICON (SI) BASED SWITCHES LIKE IGBTS AND MOSFETS, THE SIC MOSFET OFFERS A SERIES OF ADVANTAGES.
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IMW120R045M1XKSA1
NRNDTHE COOLSIC™ 1200 V, 45 MΩ SIC MOSFET IN TO247-3 PACKAGE BUILD ON A STATE-OF-THE-ART TRENCH SEMICONDUCTOR PROCESS OPTIMIZED TO COMBINE PERFORMANCE WITH RELIABILITY. IN COMPARISON TO TRADITIONAL SILICON (SI) BASED SWITCHES LIKE IGBTS AND MOSFETS, THE SIC MOSFET OFFERS A SERIES OF ADVANTAGES.
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Technical Specifications
Parameters and characteristics for this part
| Specification | IMW120R045M1XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 52 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 52 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 228 W |
| Rds On (Max) @ Id, Vgs | 59 mOhm |
| Supplier Device Package | PG-TO247-3-41 |
| Vgs (Max) [Max] | 20 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id [Max] | 5.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IMW120 Series
TheCoolSiC™1200 V, 45 mΩSiC MOSFETin TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
