IMW120 Series

Manufacturer: INFINEON

Catalog

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 36 A, 1.2 KV, 0.078 OHM, TO-247

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max) [Min]	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IMW120R060M1HXKSA1	36 A	PG-TO247-3-41	1.2 kV	175 °C	-55 °C	31 nC	-7 V 23 V	150 W	1060 pF	5.7 V	N-Channel	Through Hole	78 mOhm	15 V 18 V	TO-247-3
INFINEON IMW120R045M1XKSA1	52 A	PG-TO247-3-41	1.2 kV	175 °C	-55 °C			228 W			N-Channel	Through Hole	59 mOhm	15 V	TO-247-3	-10 V	20 V	1900 pF	5.7 V	52 nC
INFINEON IMW120R350M1HXKSA1	4.7 A	PG-TO247-3-41	1.2 kV	175 °C	-55 °C	5.3 nC	-7 V 23 V	60 W		5.7 V	N-Channel	Through Hole	455 mOhm	15 V 18 V	TO-247-3			182 pF
INFINEON IMW120R030M1HXKSA1	56 A	PG-TO247-3-41	1.2 kV	175 °C	-55 °C	63 nC	-7 V 23 V	227 W			N-Channel	Through Hole	40 mOhm	15 V 18 V	TO-247-3			2120 pF	5.7 V